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GaN is a semiconductor material of third-generation with a large forbidden-band width. It has superior properties compared to first-generation Si, and second-generation GaAs.
GaN devices, due to the large band gaps and high thermal conductivity of GaN, can operate above 200 degC temperatures, allowing them to carry higher energy densities and greater reliability. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the device. This is good for improving the overall efficiency of the product.

GaN semiconductors can therefore be designed to have a higher bandwidth, a higher amplifier gain and efficiencies, as well as smaller dimensions, all in keeping with the "tonality" that is characteristic of the semiconductor market.

The base station power amplifier also uses GaN. Gallium nitride, gallium arsenide and indium phosphide are common semiconductor materials used in radio frequency applications.

GaN devices are more powerful than processes with high frequency, such as indium phosphide and gallium arsenide. GaN also has better frequency characteristics than power processes like LDCMOS or silicon carbide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and using carrier aggregation.

Gallium nitride can achieve higher power density than silicon or any other device. GaN has a higher energy density. GaN's small size is an advantage when it comes to a power level. Smaller devices can reduce device capacitance, which makes the design of systems with higher bandwidth easier. Power Amplifiers (PA) are a critical component of the RF Circuit.

From a current application perspective, the power amplifier is primarily comprised of a gallium-arsenide power amplifier and a complementary metallic oxide semiconductor poweramplifier (CMOS PA). In this case, GaAs is the dominant PA, but 5G will make it impossible to maintain high integration with GaAs at such high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means a higher operating temperature.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will be available in the second half of 2019, and by the end Christmas and New Year. According to reports 5G technology should be up to 100 times more efficient than 4G networks. This will allow users to reach Gigabits per second and reduce latency.

As well as the increase in base station density and number, there will be a large increase in RF devices. As a result, the number of RF devices required in the 5G period will increase by dozens or even hundreds of times compared to 3G and the 4G periods. Therefore, cost control and silicon-based GaN have a major cost advantage. It is possible to achieve a market breakthrough using silicon-based GaN technologies.

Commercialization of any new semiconductor technology is difficult, and this can be seen in the evolution of the last two generations. GaN, which is also in this stage at the moment, will cost more to civilians because of the increased demand for silicon-based devices, the mass production and process innovations, etc.

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